NVMFS5C682NLAFT3G
MOSFET N-CH 60V 8.8A/25A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi N-Channel Power MOSFET, part number NVMFS5C682NLAFT3G, offers a 60V Drain-to-Source Voltage (Vdss). This AEC-Q101 qualified device features a continuous drain current of 8.8A at ambient temperature (Ta) and 25A at case temperature (Tc). With a maximum power dissipation of 3.5W (Ta) and 28W (Tc), it is designed for efficient operation. The NVMFS5C682NLAFT3G has a low on-resistance (Rds On) of 21mOhm at 10A and 10V, with a drive voltage range of 4.5V to 10V. Key parameters include a gate charge (Qg) of 5 nC (max) at 10V and input capacitance (Ciss) of 410 pF (max) at 25V. This MOSFET utilizes advanced Metal Oxide technology and is provided in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. The operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta), 25A (Tc) |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 16µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 410 pF @ 25 V |
| Qualification | AEC-Q101 |
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