NVMFS5C673NLT3G
MOSFET N-CH 60V 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS5C673NLT3G is a N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 50A at 25°C (Tc). Optimized for efficient power switching, it exhibits a maximum Rds(on) of 9.2mOhm at 25A and 10V Vgs. The MOSFET operates with gate drive voltages ranging from 4.5V to 10V, and a maximum gate-source voltage of ±20V.
With a maximum power dissipation of 46W (Tc), this automotive-grade device is suitable for high-power automotive systems and industrial applications requiring robust performance. The NVMFS5C673NLT3G is provided in a compact 5-DFN (5x6) package, offering excellent thermal management and a surface-mount design. Its operating temperature range spans from -55°C to 175°C (TJ), ensuring reliability in harsh environments. The device is AEC-Q101 qualified, meeting stringent automotive industry standards.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 46W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 35µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V |
| Qualification | AEC-Q101 |