NVMFS5C673NLAFT3G
MOSFET N-CHANNEL 60V 50A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS5C673NLAFT3G is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a maximum drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 50A at 25°C (Tc). The Rds(on) is specified at a maximum of 9.2mOhm at 25A and 10V Vgs. With a gate charge (Qg) of 9.5 nC at 10V, it offers optimized switching performance.
This MOSFET is qualified for automotive applications under the AEC-Q101 standard, ensuring reliability in demanding environments. Its 5-DFN (5x6) package, also referred to as 8-PowerTDFN, facilitates efficient thermal management with a maximum power dissipation of 46W (Tc). The operating temperature range extends from -55°C to 175°C (TJ). Key parameters include input capacitance (Ciss) of 880 pF at 25V and a gate-source threshold voltage (Vgs(th)) of 2V at 35µA. This device is suitable for automotive, industrial, and general-purpose power conversion circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.2mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 35µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V |
| Qualification | AEC-Q101 |
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