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NVMFS5C670NLWFT1G

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NVMFS5C670NLWFT1G

MOSFET N-CH 60V 17A/71A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS5C670NLWFT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage and offers continuous drain current capabilities of 17A (ambient) and 71A (case) at 25°C. The device exhibits a low on-resistance of 6.1mOhm maximum at 35A and 10V gate-source voltage. It is qualified to AEC-Q101 standards, indicating its suitability for automotive applications. Presented in a 5-DFN (5x6) package, this surface-mount MOSFET operates across a wide temperature range of -55°C to 175°C (TJ). Key electrical parameters include a maximum gate charge of 20 nC at 10V and input capacitance of 1400 pF at 25V. Power dissipation is rated at 3.6W (ambient) and 61W (case).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs6.1mOhm @ 35A, 10V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 61W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 25 V
QualificationAEC-Q101

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