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NVMFS5C670NLWFAFT3G

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NVMFS5C670NLWFAFT3G

MOSFET N-CH 60V 17A/71A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS5C670NLWFAFT3G is an N-Channel Power MOSFET designed for high-performance applications. This device features a 60V drain-source voltage (Vdss) and offers a continuous drain current of 17A at ambient temperature (Ta) and 71A at case temperature (Tc), with a maximum power dissipation of 61W (Tc). The NVMFS5C670NLWFAFT3G is qualified to AEC-Q101 standards, making it suitable for automotive applications. It is presented in a compact 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 leads, and is supplied on tape and reel. Key electrical characteristics include a low on-resistance of 6.1mOhm at 35A and 10V, an input capacitance (Ciss) of 1400pF at 25V, and a gate charge (Qg) of 20nC at 10V. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C17A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs6.1mOhm @ 35A, 10V
FET Feature-
Power Dissipation (Max)61W (Tc)
Vgs(th) (Max) @ Id2V @ 53µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1400 pF @ 25 V
QualificationAEC-Q101

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