NVMFS5C670NLT3G
MOSFET N-CH 60V 17A/71A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVMFS5C670NLT3G is an N-Channel Power MOSFET designed for demanding applications. This device features a 60V drain-source breakdown voltage and offers a continuous drain current capability of 17A at ambient temperature and 71A at case temperature. Its low on-resistance, specified as 6.1mOhm maximum at 35A and 10V Vgs, contributes to high efficiency. The MOSFET supports gate drive voltages from 4.5V to 10V and has a maximum gate charge of 20 nC at 10V Vgs. Input capacitance (Ciss) is a maximum of 1400 pF at 25V Vds. With a maximum power dissipation of 3.6W (Ta) and 61W (Tc), this component is suitable for high-power switching. It operates reliably across a wide temperature range of -55°C to 175°C (TJ). The NVMFS5C670NLT3G is packaged in an 8-PowerTDFN, 5-lead (5x6) footprint and is supplied on tape and reel. This component meets AEC-Q101 qualification, making it suitable for automotive and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 71A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.1mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 61W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
| Qualification | AEC-Q101 |
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