NVMFS5C670NLAFT3G
MOSFET N-CH 60V 17A/71A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NVMFS5C670NLAFT3G is a high-performance N-Channel Power MOSFET designed for demanding automotive applications. This AEC-Q101 qualified component features a 60V drain-source breakdown voltage and offers a continuous drain current capability of 17A at ambient temperature and up to 71A at case temperature. With a low on-resistance of 6.1mOhm at 35A and 10V, it minimizes conduction losses, achieving a maximum power dissipation of 61W at case temperature. The MOSFET utilizes advanced silicon technology and is housed in a compact 8-PowerTDFN, 5 Leads (5x6) surface mount package. Key specifications include a gate charge of 20 nC (max) at 10V and input capacitance of 1400 pF (max) at 25V. It operates reliably across a wide temperature range of -55°C to 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 71A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.1mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 61W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 53µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
| Qualification | AEC-Q101 |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
