NVMFS5C646NLWFAFT3G
MOSFET N-CH 60V 20A/93A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS5C646NLWFAFT3G is an N-Channel Power MOSFET designed for demanding applications. This device offers a 60V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 20A at 25°C ambient temperature, scaling to 93A at 25°C case temperature. It features a low on-resistance (Rds On) of 4.7mOhm maximum at 50A and 10V gate-source voltage, with a drive voltage range of 4.5V to 10V. The MOSFET is constructed using advanced Metal Oxide technology and is supplied in an 8-PowerTDFN, 5-lead package (5x6mm) suitable for surface mounting. Key parameters include a gate charge (Qg) of 33.7 nC maximum at 10V and input capacitance (Ciss) of 2164 pF maximum at 25V. With a maximum power dissipation of 3.7W (ambient) and 79W (case), and an operating temperature range of -55°C to 175°C (TJ), this component is qualified to AEC-Q101 standards, making it suitable for automotive and industrial applications requiring robust power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 93A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 79W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 33.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2164 pF @ 25 V |
| Qualification | AEC-Q101 |
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