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NVMFS5C645NLWFT3G

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NVMFS5C645NLWFT3G

MOSFET N-CH 60V 22A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5C645NLWFT3G is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V Drain-Source Voltage (Vdss) and a continuous drain current capability of 22A at 25°C (Ta), with a maximum power dissipation of 79W (Tc). The low on-resistance of 4mOhm at 50A and 10V (Vgs) ensures efficient power transfer. Key parameters include a gate charge (Qg) of 34 nC at 10V and input capacitance (Ciss) of 2200 pF at 50V. This device utilizes a surface mount, wettable flank 5-DFN (5x6) package, also known as 8-PowerTDFN, providing enhanced solder joint reliability. Qualified to AEC-Q101, the NVMFS5C645NLWFT3G is suitable for automotive applications. It operates across a temperature range of -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Ta)
Rds On (Max) @ Id, Vgs4mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)79W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2200 pF @ 50 V
QualificationAEC-Q101

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