NVMFS5C645NLWFT1G
MOSFET N-CH 60V 22A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's NVMFS5C645NLWFT1G is a 60V N-Channel Power MOSFET designed for demanding applications. This component features a low Rds(on) of 4mOhm at 50A and 10V drive, with a continuous drain current of 22A (Ta) and a maximum power dissipation of 79W (Tc). The 5x6 5-DFN (8-SOFL) package offers a wettable flank termination for enhanced solder joint reliability. Key electrical parameters include a gate charge of 34 nC at 10V and input capacitance of 2200 pF at 50V. Qualified to AEC-Q101 and operating across a temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount, Wettable Flank |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 50 V |
| Qualification | AEC-Q101 |
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