NVMFS5C645NLT3G
MOSFET N-CH 60V 22A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS5C645NLT3G is an N-Channel Power MOSFET designed for demanding applications. This device features a 60 V drain-source breakdown voltage and a continuous drain current capability of 22 A at 25°C ambient. Optimized for efficiency, it exhibits a low on-resistance of 4 mOhm at 50 A and 10 V gate drive. The MOSFET utilizes advanced MOSFET technology and is packaged in an 8-PowerTDFN, 5-lead (5x6) footprint, suitable for surface mount assembly. Its robust design includes a maximum power dissipation of 79 W at 25°C case temperature and an operating junction temperature range of -55°C to 175°C. Qualification to AEC-Q101 standards ensures suitability for automotive applications, including power management and control systems. Key electrical parameters include a maximum gate charge of 34 nC at 10 V and input capacitance of 2200 pF at 50 V. The device supports gate drive voltages up to ±20 V.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta) |
| Rds On (Max) @ Id, Vgs | 4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 50 V |
| Qualification | AEC-Q101 |