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NVMFS5C628NLWFT3G

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NVMFS5C628NLWFT3G

MOSFET N-CH 60V 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi N-Channel Power MOSFET, NVMFS5C628NLWFT3G. This automotive-qualified device features a 60 V drain-to-source voltage and a continuous drain current of 150 A (Tc). With a low Rds(on) of 2.4 mOhm at 50 A and 10 V, it offers efficient power handling. The MOSFET is packaged in an 8-PowerTDFN, 5 Leads (5-DFN 5x6) for surface mounting and operates across a temperature range of -55°C to 175°C (TJ). Key parameters include a gate charge (Qg) of 52 nC @ 10 V and input capacitance (Ciss) of 3600 pF @ 25 V. Power dissipation is rated at 3.7 W (Ta) and 110 W (Tc). This component is suitable for applications in automotive power management and electric vehicle systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C150A (Tc)
Rds On (Max) @ Id, Vgs2.4mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id2V @ 135µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 25 V
QualificationAEC-Q101

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