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NVMFS5C628NLT3G

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NVMFS5C628NLT3G

MOSFET N-CH 60V 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi N-Channel Power MOSFET, NVMFS5C628NLT3G, offers a 60 V drain-source voltage and a continuous drain current of 150 A at 25°C (Tc). This AEC-Q101 qualified component is housed in a 5-DFN (5x6) (8-SOFL) package for surface mounting. Key electrical characteristics include a maximum Rds(on) of 2.4 mOhm at 50 A and 10 V, and a maximum gate charge (Qg) of 52 nC at 10 V. It supports gate-source voltages up to ±20V and features a threshold voltage (Vgs(th)) of 2V at 135µA. Power dissipation is rated at 3.7W (Ta) and 110W (Tc). This device is suitable for demanding automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C150A (Tc)
Rds On (Max) @ Id, Vgs2.4mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id2V @ 135µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 25 V
QualificationAEC-Q101

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