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NVMFS5C628NLAFT3G

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NVMFS5C628NLAFT3G

MOSFET N-CH 60V 28A/150A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5C628NLAFT3G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 28A at ambient temperature (Ta) and 150A at case temperature (Tc). With a low Rds(On) of 2.4mOhm at 50A and 10V, and a maximum power dissipation of 110W (Tc), it supports efficient power handling. The device is housed in a 5x6mm 5-DFN package, specifically the 8-PowerTDFN, 5-lead variant, and is supplied on tape and reel. Key electrical characteristics include a gate charge (Qg) of 52nC at 10V and input capacitance (Ciss) of 3600pF at 25V. Qualified to AEC-Q101 standards and designated as Automotive grade, this MOSFET is suitable for automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C28A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs2.4mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id2V @ 135µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3600 pF @ 25 V
QualificationAEC-Q101

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