NVMFS5C612NLWFT1G
MOSFET N-CH 60V 36A/235A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS5C612NLWFT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 60V and offers a continuous drain current (Id) of 36A at 25°C ambient temperature, scaling to 235A under specific thermal conditions. Its low on-resistance (Rds On) of 1.5mOhm at 50A and 10V gate drive makes it highly efficient. The device supports gate drive voltages from 4.5V to 10V and has a maximum gate-source voltage of ±20V.
With a maximum power dissipation of 3.8W (ambient) or 167W (case), the NVMFS5C612NLWFT1G is suitable for high-power environments. It is packaged in an 8-PowerTDFN, 5-lead (5x6) footprint, provided on tape and reel. The component operates across a wide temperature range of -55°C to 175°C (TJ). Qualified to AEC-Q101, this MOSFET is utilized in automotive systems and other high-performance power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Ta), 235A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 167W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6660 pF @ 25 V |
| Qualification | AEC-Q101 |
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