NVMFS5C612NLT1G
MOSFET N-CH 60V 36A/235A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS5C612NLT1G is an N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60V and offers a continuous drain current (Id) of 36A at 25°C ambient, scaling up to 235A under case temperature conditions. With a low Rds(on) of 1.5mOhm at 50A and 10V, it ensures efficient power handling, dissipating up to 3.8W (Ta) or 167W (Tc). The device operates across a wide temperature range from -55°C to 175°C (TJ). Gate drive voltages range from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Key electrical parameters include a maximum gate charge (Qg) of 91 nC at 10V and a maximum input capacitance (Ciss) of 6660 pF at 25V. The MOSFET is housed in a 5-DFN (5x6) package, specifically an 8-PowerTDFN, 5-lead configuration, suitable for surface mounting. This component is AEC-Q101 qualified, making it suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 6 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 36A (Ta), 235A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 167W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6660 pF @ 25 V |
| Qualification | AEC-Q101 |
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