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NVMFS5C604NLWFT3G

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NVMFS5C604NLWFT3G

MOSFET N-CH 60V 40A/287A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5C604NLWFT3G is an N-Channel Power MOSFET designed for demanding applications. It features a 60V drain-source voltage (Vdss) and offers a continuous drain current (Id) of 40A at 25°C ambient and 287A at 25°C case temperature. With a low on-resistance (Rds On) of 1.2mOhm at 50A and 10V Vgs, it facilitates efficient power transfer. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. Key parameters include a maximum gate charge (Qg) of 120 nC at 10V and maximum input capacitance (Ciss) of 8900 pF at 25V. Power dissipation is rated at 3.9W (Ta) and 200W (Tc). This AEC-Q101 qualified component is housed in an 8-PowerTDFN, 5-DFN (5x6) package and is supplied on tape and reel. It operates across a junction temperature range of -55°C to 175°C, making it suitable for automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Ta), 287A (Tc)
Rds On (Max) @ Id, Vgs1.2mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8900 pF @ 25 V
QualificationAEC-Q101

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