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NVMFS5C604NLT3G

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NVMFS5C604NLT3G

MOSFET N-CH 60V 40A/287A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5C604NLT3G is an N-Channel Power MOSFET designed for demanding automotive applications. This component features a 60V drain-source breakdown voltage and offers a continuous drain current capability of 40A at ambient temperature and up to 287A at case temperature. With a low on-resistance of 1.2mOhm maximum at 50A and 10V Vgs, it minimizes conduction losses. The device supports a wide gate drive voltage range from 4.5V to 10V and boasts a low gate charge of 120 nC maximum. It is housed in a compact 5x6mm 8-SOFL (5-DFN) package suitable for surface mounting and operates across an extended temperature range from -55°C to 175°C. Qualified to AEC-Q101 standards, this MOSFET is engineered for high-power density solutions in automotive power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Ta), 287A (Tc)
Rds On (Max) @ Id, Vgs1.2mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8900 pF @ 25 V
QualificationAEC-Q101

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