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NVMFS5C604NLT1G

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NVMFS5C604NLT1G

MOSFET N-CH 60V 40A/287A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS5C604NLT1G is an N-Channel Power MOSFET designed for high-performance applications. This device features a drain-source voltage of 60 V and offers continuous drain current capabilities of 40 A at ambient temperature and 287 A at case temperature. The Rds(on) is specified at a maximum of 1.2 mOhm at 50 A and 10 V. Key parameters include input capacitance (Ciss) of 8900 pF at 25 V and gate charge (Qg) of 120 nC at 10 V. It operates across a temperature range of -55°C to 175°C (TJ) and supports drive voltages from 4.5 V to 10 V. The MOSFET is housed in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. This component is AEC-Q101 qualified and is utilized in automotive and industrial sectors. Power dissipation is rated at 3.9 W (Ta) and 200 W (Tc).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Ta), 287A (Tc)
Rds On (Max) @ Id, Vgs1.2mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8900 pF @ 25 V
QualificationAEC-Q101

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