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NVMFS5C604NLAFT3G

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NVMFS5C604NLAFT3G

MOSFET N-CH 60V 287A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5C604NLAFT3G is a high-performance N-Channel Power MOSFET designed for demanding automotive applications. This AEC-Q101 qualified component features a 60V drain-source voltage and a continuous drain current capability of 287A at 25°C (Tj), with a maximum power dissipation of 200W (Tc). The device offers low on-resistance, specified as a maximum of 1.2mOhm at 50A and 10V gate drive. It supports gate drive voltages from 4.5V to 10V and has a maximum gate-source voltage of ±20V. Key characteristics include a gate charge (Qg) of 52 nC at 4.5V and an input capacitance (Ciss) of 8900 pF at 25V. The NVMFS5C604NLAFT3G is housed in a 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 Leads, for surface mounting and is supplied on tape and reel. This MOSFET is suitable for power management and switching in automotive systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C287A (Tc)
Rds On (Max) @ Id, Vgs1.2mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)200W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs52 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds8900 pF @ 25 V
QualificationAEC-Q101

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