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NVMFS5C468NLWFT1G

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NVMFS5C468NLWFT1G

MOSFET N-CH 40V 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5C468NLWFT1G is an N-Channel Power MOSFET designed for demanding applications. This device offers a 40V drain-source voltage rating and supports a continuous drain current of 37A at 25°C (Tc). Featuring low on-resistance of 10.3mOhm at 20A and 10V Vgs, it is optimized for efficient power switching. The MOSFET is housed in a 5-DFN (5x6) package, with a 5-lead configuration, suitable for surface mount assembly. Key electrical characteristics include input capacitance (Ciss) of 570pF at 25V and a gate charge (Qg) of 7.3nC at 10V. Operating across a wide temperature range of -55°C to 175°C (TJ), this component is AEC-Q101 qualified, making it suitable for automotive applications. Power dissipation capabilities are rated at 3.5W (Ta) and 28W (Tc).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C37A (Tc)
Rds On (Max) @ Id, Vgs10.3mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 25 V
QualificationAEC-Q101

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