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NVMFS5C468NLT1G

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NVMFS5C468NLT1G

MOSFET N-CH 40V 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5C468NLT1G is an N-Channel Power MOSFET designed for demanding automotive applications. This component features a 40 V drain-source voltage and a continuous drain current capability of 37 A at 25°C (Tc). The device offers a low on-resistance of 10.3 mOhm maximum at 20 A and 10 V, with a gate drive voltage range from 4.5 V to 10 V. Key parameters include a 570 pF input capacitance (Ciss) at 25 V and a gate charge (Qg) of 7.3 nC at 10 V. The MOSFET is housed in an 8-PowerTDFN, 5-lead package, specifically a 5-DFN (5x6) (8-SOFL) configuration, suitable for surface mounting. Operating temperature ranges from -55°C to 175°C (TJ). Qualification to AEC-Q101 standards ensures suitability for automotive environments. Power dissipation is specified at 3.5 W (Ta) and 28 W (Tc).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C37A (Tc)
Rds On (Max) @ Id, Vgs10.3mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 25 V
QualificationAEC-Q101

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