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NVMFS5C460NLT1G

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NVMFS5C460NLT1G

MOSFET N-CH 40V 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS5C460NLT1G is an N-Channel Power MOSFET designed for high-performance applications. This device features a 40V drain-source voltage (Vdss) and a continuous drain current of 78A at 25°C (Tc). With a low on-resistance of 4.5mOhm at 35A and 10Vgs, it offers efficient power handling. The MOSFET is housed in an 8-PowerTDFN, 5-lead package, with a 5x6 (8-SOFL) supplier device package, suitable for surface mount configurations. Key electrical parameters include a 23 nC gate charge (Qg) and 1300 pF input capacitance (Ciss). Operating across a wide temperature range of -55°C to 175°C (TJ), this component is AEC-Q101 qualified. It is suitable for demanding automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C78A (Tc)
Rds On (Max) @ Id, Vgs4.5mOhm @ 35A, 10V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V
QualificationAEC-Q101

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