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NVMFS5C460NLAFT3G

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NVMFS5C460NLAFT3G

MOSFET N-CH 40V 21A/78A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5C460NLAFT3G is an N-Channel Power MOSFET designed for demanding automotive applications. This component features a 40V drain-source voltage (Vdss) and offers a continuous drain current (Id) of 21A at 25°C ambient and up to 78A at 25°C case temperature. With a low on-resistance (Rds On) of 4.5mOhm at 35A and 10V, it minimizes conduction losses. The MOSFET supports drive voltages from 4.5V to 10V, with a maximum gate-source voltage (Vgs) of ±20V. Key parameters include a maximum gate charge (Qg) of 23 nC at 10V and a maximum input capacitance (Ciss) of 1300 pF at 25V. The device's power dissipation is rated at 3.6W (Ta) and 50W (Tc). Packaged in an 8-PowerTDFN, 5-Lead (5x6) 5-DFN footprint, it is suitable for surface mount configurations. This component meets AEC-Q101 qualification, making it suitable for automotive power management and switching applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C21A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs4.5mOhm @ 35A, 10V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1300 pF @ 25 V
QualificationAEC-Q101

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