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NVMFS5C456NLWFAFT3G

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NVMFS5C456NLWFAFT3G

MOSFET N-CH 40V 22A/87A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5C456NLWFAFT3G is an N-Channel Power MOSFET designed for demanding applications. This component features a 40V Drain-Source Voltage (Vdss) and offers continuous drain current capabilities of 22A at ambient temperature (Ta) and 87A at case temperature (Tc). Its low on-resistance is specified at 3.7mOhm maximum at 20A and 10V Vgs. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V. With a maximum power dissipation of 3.6W (Ta) and 55W (Tc), the NVMFS5C456NLWFAFT3G is suitable for high-power density designs. It exhibits a maximum input capacitance (Ciss) of 1600pF at 25V Vds and a maximum gate charge (Qg) of 18nC at 10V Vgs. The MOSFET is packaged in an 8-PowerTDFN, 5-lead (5x6) 5-DFN (8-SOFL) configuration for surface mounting, and operates across a wide temperature range of -55°C to 175°C (TJ). This component is qualified to AEC-Q101 standards, making it suitable for automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 14 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs3.7mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id2V @ 50µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 25 V
QualificationAEC-Q101

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