NVMFS5C456NLT1G
MOSFET N-CH 40V 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS5C456NLT1G is an N-Channel Power MOSFET designed for demanding applications. Featuring a 40 V drain-source voltage and a continuous drain current of 87A at 25°C (Tc), this component offers robust performance. Its low on-resistance of 3.7 mOhm at 20A and 10V gate drive ensures efficient power transfer. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Key parameters include a maximum gate charge of 18 nC at 10V and input capacitance of 1600 pF at 25V. With a maximum power dissipation of 55W (Tc), the NVMFS5C456NLT1G is suitable for high-power switching. It utilizes advanced MOSFET technology and is packaged in an 8-PowerTDFN, 5-lead (5x6) surface mount configuration, supplied on tape and reel. This component is AEC-Q101 qualified and operates across a temperature range of -55°C to 175°C (TJ), making it appropriate for automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 87A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.6W (Ta), 55W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 25 V |
| Qualification | AEC-Q101 |