NVMFS5C450NLWFT1G
MOSFET N-CH 40V 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS5C450NLWFT1G is an N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-to-Source Voltage (Vdss) of 40 V and a continuous drain current (Id) of 110 A at 25°C (Tc), this component offers robust performance. Its low on-resistance (Rds On) of 2.8 mOhm at 40 A and 10 V gate drive ensures efficient power delivery. The device supports gate drive voltages from 4.5 V to 10 V, with a maximum gate-source voltage (Vgs) of ±20V. Input capacitance (Ciss) is a maximum of 2100 pF at 20 V, and gate charge (Qg) is 35 nC at 10 V.
With a maximum power dissipation of 3.7 W (Ta) and 68 W (Tc), and an operating temperature range of -55°C to 175°C (TJ), the NVMFS5C450NLWFT1G is built for challenging thermal environments. It is housed in an 8-PowerTDFN, 5-lead package (5-DFN 5x6), suitable for surface mounting and supplied on tape and reel. This component is AEC-Q101 qualified, making it suitable for automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.7W (Ta), 68W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 20 V |
| Qualification | AEC-Q101 |