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NVMFS5C442NWFT1G

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NVMFS5C442NWFT1G

MOSFET N-CH 40V 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS5C442NWFT1G is a N-Channel Power MOSFET designed for high-performance applications. This device features a Drain-to-Source Voltage (Vdss) of 40 V and a continuous drain current (Id) of 140 A at 25°C (Tc). The on-resistance (Rds On) is specified at a maximum of 2.3 mOhm at 50 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 32 nC (max) at 10 V and input capacitance (Ciss) of 2100 pF (max) at 25 V. The MOSFET is housed in an 8-PowerTDFN, 5-Lead package, with the supplier device package being 5-DFN (5x6). Power dissipation reaches 3.7W (Ta) and 83W (Tc). This component is AEC-Q101 qualified and automotive grade, making it suitable for automotive systems, power supplies, and motor control applications. It operates within a temperature range of -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C140A (Tc)
Rds On (Max) @ Id, Vgs2.3mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2100 pF @ 25 V
QualificationAEC-Q101

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