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NVMFS5C442NT1G

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NVMFS5C442NT1G

MOSFET N-CH 40V 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5C442NT1G is a N-Channel Power MOSFET designed for demanding applications. This device features a 40 V drain-source voltage and a continuous drain current capability of 140 A at 25°C (Tc). With a low on-resistance of 2.3 mOhm at 50 A and 10 V, it minimizes conduction losses. The MOSFET is housed in an 8-PowerTDFN, 5-lead package, suitable for surface mounting, and offers a high power dissipation of 83 W (Tc). Its operating temperature range of -55°C to 175°C (TJ) and AEC-Q101 qualification make it ideal for automotive and industrial power management systems. Key electrical parameters include a gate charge of 32 nC at 10 V and input capacitance of 2100 pF at 25 V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C140A (Tc)
Rds On (Max) @ Id, Vgs2.3mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2100 pF @ 25 V
QualificationAEC-Q101

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