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NVMFS5C442NLT3G

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NVMFS5C442NLT3G

MOSFET N-CH 40V 27A/127A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS5C442NLT3G is an N-Channel Power MOSFET designed for demanding applications. This automotive-grade device features a 40V drain-source breakdown voltage and offers a continuous drain current of 27A at ambient temperature and 127A at case temperature. The low on-resistance of 2.8mOhm at 50A and 10V Vgs, combined with a maximum power dissipation of 83W at case temperature, makes it suitable for high-efficiency power conversion. Key parameters include a gate charge of 50nC at 10V and input capacitance of 3100pF at 25V. The NVMFS5C442NLT3G is housed in a 5-DFN (5x6) (8-SOFL) package, facilitating surface mounting. It operates across a temperature range of -55°C to 175°C and is AEC-Q101 qualified. This MOSFET is utilized in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C27A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs2.8mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 25 V
QualificationAEC-Q101

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