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NVMFS5C442NLT1G

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NVMFS5C442NLT1G

MOSFET N-CH 40V 27A/127A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5C442NLT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 40V and offers high continuous drain current capabilities of 27A at ambient temperature (Ta) and up to 127A at case temperature (Tc). Its low Rds(on) of 2.8mOhm at 50A and 10V Vgs ensures efficient power transfer. The device boasts a maximum power dissipation of 3.7W (Ta) and 83W (Tc). Packaged in a compact 5-DFN (5x6) (8-SOFL) format suitable for surface mounting, the NVMFS5C442NLT1G operates across a wide temperature range of -55°C to 175°C. This automotive-qualified (AEC-Q101) MOSFET is ideal for power management solutions in automotive and industrial sectors. Key electrical characteristics include a gate charge (Qg) of 50 nC at 10V and input capacitance (Ciss) of 3100 pF at 25V.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C27A (Ta), 127A (Tc)
Rds On (Max) @ Id, Vgs2.8mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 25 V
QualificationAEC-Q101

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