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NVMFS5C442NLAFT3G

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NVMFS5C442NLAFT3G

MOSFET N-CH 40V 29A/130A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS5C442NLAFT3G is a N-Channel Power MOSFET designed for demanding automotive applications. This device features a 40V drain-source voltage and offers a continuous drain current of 29A at 25°C ambient temperature and 130A at 25°C case temperature. The Rds(On) is specified at a maximum of 2.5mOhm at 50A and 10V Vgs. With a maximum power dissipation of 3.7W (Ta) and 83W (Tc), this MOSFET is suitable for high-power switching applications. Key parameters include a gate charge of 50 nC (max) @ 10V Vgs and input capacitance of 3100 pF (max) @ 25V Vds. The device operates across a temperature range of -55°C to 175°C (TJ) and is qualified for AEC-Q101. It is supplied in a 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 Leads, and is available on Tape & Reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C29A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs2.5mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 25 V
QualificationAEC-Q101

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