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NVMFS5C430NWFT3G

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NVMFS5C430NWFT3G

MOSFET N-CH 40V 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS5C430NWFT3G is an N-Channel Power MOSFET designed for high-performance applications. This automotive qualified device features a 40 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 185 A at 25°C (Tc). The NVMFS5C430NWFT3G offers a low on-resistance (Rds On) of 1.7 mOhm at 50 A and 10 V gate-source voltage (Vgs). Its surface mount 5-DFN (5x6) 8-SOFL package is suitable for demanding thermal management, with a maximum power dissipation of 106 W (Tc). Key specifications include a gate charge (Qg) of 47 nC at 10 V and an input capacitance (Ciss) of 3300 pF at 25 V. This component is utilized in automotive power management and motor control systems. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C185A (Tc)
Rds On (Max) @ Id, Vgs1.7mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 25 V
QualificationAEC-Q101

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