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NVMFS5C430NWFT1G

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NVMFS5C430NWFT1G

MOSFET N-CH 40V 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5C430NWFT1G is an N-Channel Power MOSFET designed for demanding automotive applications. This device features a Vds of 40V and a continuous drain current capability of 185A at 25°C (Tc). With a low Rds(on) of 1.7mOhm at 50A and 10V Vgs, it offers efficient power handling. The MOSFET is packaged in an 8-PowerTDFN, 5-Lead (5x6) footprint for surface mounting. Key parameters include a gate charge (Qg) of 47 nC at 10V and input capacitance (Ciss) of 3300 pF at 25V. Power dissipation is rated at 3.8W (Ta) and 106W (Tc). This component is AEC-Q101 qualified, ensuring suitability for the automotive industry. The operating temperature range is -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C185A (Tc)
Rds On (Max) @ Id, Vgs1.7mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 25 V
QualificationAEC-Q101

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