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NVMFS5C430NT3G

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NVMFS5C430NT3G

MOSFET N-CH 40V 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5C430NT3G is an N-Channel Power MOSFET designed for demanding applications. Featuring a drain-source voltage (Vdss) of 40 V and a continuous drain current (Id) of up to 185 A at 25°C (Tc), this device offers low on-resistance (Rds On) of 1.7 mOhm at 50 A and 10 V. The MOSFET utilizes advanced Metal Oxide technology and is housed in a 5-DFN (5x6) (8-SOFL) package for efficient thermal management, with a maximum power dissipation of 106 W (Tc). Key parameters include a gate charge (Qg) of 47 nC at 10 V and input capacitance (Ciss) of 3300 pF at 25 V. This component is AEC-Q101 qualified and suitable for automotive applications. It operates within a temperature range of -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C185A (Tc)
Rds On (Max) @ Id, Vgs1.7mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 106W (Tc)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3300 pF @ 25 V
QualificationAEC-Q101

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