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NVMFS5C430NLT1G

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NVMFS5C430NLT1G

MOSFET N-CH 40V 200A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5C430NLT1G is an N-Channel Power MOSFET designed for demanding automotive applications. This device features a 40V drain-to-source voltage and supports a continuous drain current of 200A at 25°C (Tc). The Rds(On) is specified at a maximum of 1.5mOhm when driven at 10Vgs with a 50A drain current. Key parameters include a gate charge (Qg) of 70 nC at 10Vgs and input capacitance (Ciss) of 4300 pF at 20Vds. The MOSFET offers a maximum power dissipation of 110W (Tc) and 3.8W (Ta). It is housed in a 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 Leads, and is supplied on tape and reel. This component meets AEC-Q101 qualification standards and operates across a temperature range of -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Rds On (Max) @ Id, Vgs1.5mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4300 pF @ 20 V
QualificationAEC-Q101

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