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NVMFS5C430NLAFT3G

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NVMFS5C430NLAFT3G

MOSFET N-CH 40V 38A/200A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5C430NLAFT3G is an N-Channel Power MOSFET designed for demanding applications. Featuring a 40V drain-source breakdown voltage, this component offers a continuous drain current capability of 38A at ambient temperature and 200A at case temperature. Its low on-resistance of 1.4mOhm at 50A and 10V Vgs, combined with a maximum power dissipation of 110W (Tc), makes it suitable for high-power switching and automotive applications. The NVMFS5C430NLAFT3G utilizes advanced MOSFET technology with a 4.5V to 10V drive voltage range and a gate charge of 70 nC at 10V. Packaged in an 8-PowerTDFN, 5-lead (5x6) 5-DFN (8-SOFL) package, it is supplied on tape and reel for automated assembly. Qualified to AEC-Q101, this device is engineered for reliability in the automotive industry.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 29 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs1.4mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds4300 pF @ 20 V
QualificationAEC-Q101

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