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NVMFS5C423NLWFT1G

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NVMFS5C423NLWFT1G

MOSFET N-CH 40V 31A/150A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS5C423NLWFT1G is an N-Channel Power MOSFET designed for demanding applications. This device features a 40V Drain-Source Voltage (Vdss) and supports continuous drain currents of 31A at ambient temperature and 150A at case temperature. Its low on-resistance of 2 mOhm at 50A and 10V gate drive voltage, coupled with a maximum gate charge of 50 nC at 10V, ensures efficient switching performance. The MOSFET offers significant power dissipation capabilities, rated at 3.7W (Ta) and 83W (Tc). Packaged in an 8-PowerTDFN, 5-Lead (5x6) (8-SOFL) configuration, this component is suitable for surface mounting and operates across a wide temperature range from -55°C to 175°C (TJ). Qualified to AEC-Q101 standards, the NVMFS5C423NLWFT1G is suitable for automotive and industrial power management systems. The device is available on tape and reel.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C31A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs2mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 20 V
QualificationAEC-Q101

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