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NVMFS5C423NLT1G

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NVMFS5C423NLT1G

MOSFET N-CH 40V 126A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS5C423NLT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a 40 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 150 A at 25°C (Tc), with a maximum Rds(on) of 2 mOhm at 50 A and 10 V. The device is constructed using advanced MOSFET technology and is qualified to AEC-Q101 standards, making it suitable for automotive applications. Its robust thermal performance is indicated by a maximum power dissipation of 3.7 W (Ta) and 83 W (Tc). The NVMFS5C423NLT1G is housed in an 8-PowerTDFN, 5-Lead (5-DFN 5x6) package, mounted via surface mount. Key electrical characteristics include a gate charge (Qg) of 50 nC at 10 V and input capacitance (Ciss) of 3100 pF at 20 V. It operates across a temperature range of -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C150A (Tc)
Rds On (Max) @ Id, Vgs2mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3100 pF @ 20 V
QualificationAEC-Q101

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