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NVMFS5C410NT1G

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NVMFS5C410NT1G

MOSFET N-CH 40V 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS5C410NT1G is an N-Channel Power MOSFET designed for demanding applications. This AEC-Q101 qualified component features a Drain-Source Voltage (Vdss) of 40V and a continuous drain current capability of 300A at 25°C (Tc). The low on-resistance of 0.92mOhm at 50A and 10V drive voltage, coupled with a gate charge of 86 nC at 10V, optimizes switching performance. With a maximum power dissipation of 166W at 25°C (Tc), it is suitable for high-power applications. The device is housed in a compact 5-DFN (5x6) package, also referred to as 8-PowerTDFN, 5 Leads, and is supplied on tape and reel. Operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive power management and high-current switching circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C300A (Tc)
Rds On (Max) @ Id, Vgs0.92mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id3.5V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6100 pF @ 25 V
QualificationAEC-Q101

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