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NVMFS5C410NLWFT3G

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NVMFS5C410NLWFT3G

MOSFET N-CH 40V 48A/315A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS5C410NLWFT3G is an N-Channel Power MOSFET designed for demanding automotive applications. This device offers a 40 V drain-source voltage and a continuous drain current capability of 48 A at 25°C ambient temperature and 315 A at 25°C case temperature. The MOSFET features a low on-resistance of 0.9 mOhm at 50 A and 10 V Vgs, with a maximum gate charge of 143 nC at 10 V. It supports gate drive voltages from 4.5 V to 10 V and has a maximum gate-source voltage of ±20 V. With a maximum power dissipation of 3.8 W (Ta) and 167 W (Tc), this component is suitable for high-power switching applications. The NVMFS5C410NLWFT3G is qualified to AEC-Q101 standards and is supplied in a 5-DFN (5x6) package, also referred to as 8-PowerTDFN, in tape and reel packaging. Its operating temperature range is -55°C to 175°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C48A (Ta), 315A (Tc)
Rds On (Max) @ Id, Vgs0.9mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8862 pF @ 25 V
QualificationAEC-Q101

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