NVMFS5C410NLWFT1G
MOSFET N-CH 40V 48A/315A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NVMFS5C410NLWFT1G is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 40V and offers a continuous drain current capability of 48A at ambient temperature and 315A at case temperature. With a low on-resistance (Rds On) of 0.9mOhm at 50A and 10V Vgs, it minimizes conduction losses. The MOSFET is housed in an 8-PowerTDFN, 5-lead package (5x6) and supports surface mounting. Key parameters include a Gate Charge (Qg) of 143 nC at 10V and input capacitance (Ciss) of 8862 pF at 25V. This component is AEC-Q101 qualified, making it suitable for automotive and industrial power management systems. It operates across a junction temperature range of -55°C to 175°C and has a maximum power dissipation of 3.8W (Ta) or 167W (Tc).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Ta), 315A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.9mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 167W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 143 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8862 pF @ 25 V |
| Qualification | AEC-Q101 |
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