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NVMFS5C410NLAFT3G

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NVMFS5C410NLAFT3G

MOSFET N-CH 40V 50A/330A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5C410NLAFT3G is an N-Channel Power MOSFET designed for high-performance applications. This component features a 40V Drain-to-Source Voltage (Vdss) rating and supports continuous drain currents of 50A at ambient temperature and 330A at case temperature. With a low on-resistance of 0.82mOhm at 50A and 10V Vgs, it minimizes conduction losses. The device is housed in a 5-DFN (5x6) (8-SOFL) package, suitable for surface mounting. Key electrical characteristics include a maximum gate charge (Qg) of 143 nC at 10V Vgs and input capacitance (Ciss) of 8862 pF at 25V Vds. The operating junction temperature range is -55°C to 175°C. This MOSFET is AEC-Q101 qualified, making it suitable for automotive and industrial applications requiring robust performance.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs0.82mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8862 pF @ 25 V
QualificationAEC-Q101

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