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NVMFS5C404NWFT3G

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NVMFS5C404NWFT3G

MOSFET N-CH 40V 53A/378A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi presents the NVMFS5C404NWFT3G, an N-Channel Power MOSFET designed for high-performance applications. This automotive-grade component features a Drain-to-Source Voltage (Vdss) of 40 V and a continuous drain current (Id) capability of 53 A at 25°C ambient and 378 A at 25°C case temperature. The device offers a low on-resistance (Rds On) of 0.7 mOhm maximum at 50 A and 10 V gate drive. With a maximum power dissipation of 3.9 W (Ta) and 200 W (Tc), this MOSFET is suitable for demanding power management solutions. The NVMFS5C404NWFT3G is housed in an 8-PowerTDFN, 5-lead package (5-DFN 5x6) and is supplied on tape and reel. Key parameters include a gate charge of 128 nC at 10 V and input capacitance of 8400 pF at 25 V. This component is qualified to AEC-Q101 standards, indicating suitability for automotive environments.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs0.7mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8400 pF @ 25 V
QualificationAEC-Q101

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