NVMFS5C404NWFT1G-M
MOSFET N-CH 40V 53A/378A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NVMFS5C404NWFT1G-M is an N-Channel Power MOSFET designed for automotive applications, meeting AEC-Q101 standards. This component features a 40V Drain-to-Source Voltage (Vdss) and supports a continuous drain current of 53A at typical ambient temperature (Ta) and up to 378A at case temperature (Tc). The device offers a low on-resistance (Rds On) of 0.7mOhm at 50A and 10V gate drive. Power dissipation capabilities are 3.9W under ambient conditions and 200W when measured at the case. The MOSFET is housed in an 8-PowerTDFN, 5-lead package (5x6 DFN), suitable for surface mounting. Key electrical parameters include a maximum gate charge (Qg) of 128 nC at 10V and input capacitance (Ciss) of 8400 pF at 25V. This component is utilized in demanding sectors such as automotive power management and electric vehicle systems.
Additional Information
Series: Automotive, AEC-Q101RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 53A (Ta), 378A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.7mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8400 pF @ 25 V |
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