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NVMFS5C404NWFT1G

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NVMFS5C404NWFT1G

MOSFET N-CH 40V 53A/378A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NVMFS5C404NWFT1G is an N-Channel Power MOSFET designed for demanding applications. This component features a 40V drain-source voltage (Vdss) and offers a continuous drain current of 53A at 25°C ambient temperature (Ta) and 378A at 25°C case temperature (Tc). With a maximum power dissipation of 3.9W (Ta) and 200W (Tc), it is suitable for high-power switching. The device exhibits a low on-resistance (Rds On) of 0.7mOhm maximum at 50A and 10V gate-source voltage (Vgs). Key electrical characteristics include a gate charge (Qg) of 128 nC maximum at 10V and input capacitance (Ciss) of 8400 pF maximum at 25V. The NVMFS5C404NWFT1G is housed in a 5-DFN (5x6) 8-SOFL package and is qualified to AEC-Q101, making it ideal for automotive environments. It operates across an extended temperature range of -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs0.7mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8400 pF @ 25 V
QualificationAEC-Q101

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