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NVMFS5C404NLWFT3G

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NVMFS5C404NLWFT3G

MOSFET N-CH 40V 49A/352A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi N-Channel Power MOSFET, part number NVMFS5C404NLWFT3G. This AEC-Q101 qualified component offers a 40V drain-source voltage and a continuous drain current of 49A at 25°C ambient, scaling to 352A at 25°C case temperature. Featuring a low on-resistance of 0.75mOhm at 50A and 10V Vgs, it is designed for efficient power switching. The device supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V. Maximum power dissipation is 3.9W (ambient) or 200W (case). The NVMFS5C404NLWFT3G utilizes Surface Mount technology, packaged in an 8-PowerTDFN, 5-Lead (5x6) (8-SOFL) format and supplied on Tape & Reel. This MOSFET is suitable for automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C49A (Ta), 352A (Tc)
Rds On (Max) @ Id, Vgs0.75mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds12168 pF @ 25 V
QualificationAEC-Q101

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