NVMFS5C404NLT1G
MOSFET N-CH 40V 49A/352A 5DFNManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NVMFS5C404NLT1G is an N-Channel Power MOSFET designed for high-performance applications. This component features a drain-source voltage (Vdss) of 40 V and offers a continuous drain current (Id) of 49 A at 25°C ambient temperature, scaling to 352 A at 25°C case temperature. The device exhibits a low on-resistance (Rds On) of 0.75 mOhm at 50 A and 10 V gate-source voltage. It operates with a gate drive range of 4.5 V to 10 V and has a maximum gate-source voltage of ±20 V. Key parameters include a maximum gate charge (Qg) of 181 nC at 10 V and input capacitance (Ciss) of 12168 pF at 25 V. The MOSFET provides a maximum power dissipation of 3.9 W (Ta) and 200 W (Tc). This AEC-Q101 qualified component is housed in an 8-PowerTDFN, 5-Lead (5x6) package, suitable for surface mounting. The NVMFS5C404NLT1G is engineered for demanding automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN, 5 Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 49A (Ta), 352A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.75mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.9W (Ta), 200W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 181 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 12168 pF @ 25 V |
| Qualification | AEC-Q101 |
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