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NVMFS5C404NAFT3G

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NVMFS5C404NAFT3G

MOSFET N-CH 40V 53A/378A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS5C404NAFT3G is an N-Channel Power MOSFET designed for high-efficiency power conversion and switching applications. This device features a 40V drain-source breakdown voltage and offers a continuous drain current capability of 53A at 25°C ambient temperature and 378A at 25°C case temperature. With a low on-resistance of 0.7mOhm at 50A and 10V Vgs, it minimizes conduction losses. The MOSFET supports gate drive voltages up to ±20V and exhibits a gate charge of 128nC at 10V. It is qualified to AEC-Q101 standards and manufactured with MOSFET technology, suitable for demanding automotive environments. The component is packaged in an 8-PowerTDFN, 5-Lead (5x6) (8-SOFL) format, supplied on tape and reel for automated assembly. Its robust thermal performance allows for significant power dissipation, up to 3.9W (Ta) and 200W (Tc).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 19 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C53A (Ta), 378A (Tc)
Rds On (Max) @ Id, Vgs0.7mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.9W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)40 V
Gate Charge (Qg) (Max) @ Vgs128 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds8400 pF @ 25 V
QualificationAEC-Q101

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