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NVMFS5A160PLZWFT3G

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NVMFS5A160PLZWFT3G

MOSFET P-CH 60V 15A/100A 5DFN

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NVMFS5A160PLZWFT3G is a P-Channel Power MOSFET designed for demanding applications. This component boasts a 60V drain-to-source voltage (Vdss) and supports continuous drain current (Id) of 15A at ambient temperature and 100A at case temperature. With a low on-resistance (Rds On) of 7.7mOhm at 50A and 10V Vgs, it minimizes conduction losses. The device features a maximum gate charge (Qg) of 160 nC at 10V Vgs. Power dissipation is rated at 3.8W (Ta) and 200W (Tc). The NVMFS5A160PLZWFT3G is qualified to AEC-Q101 standards and is supplied in a 5-DFN (5x6) (8-SOFL) package suitable for surface mounting. It is engineered for automotive applications, offering a wide operating temperature range of -55°C to 175°C (TJ).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerTDFN, 5 Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs7.7mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id2.6V @ 1mA
Supplier Device Package5-DFN (5x6) (8-SOFL)
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7700 pF @ 20 V
QualificationAEC-Q101

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